unisonic technologies co., ltd UFZ34 preliminary power m o sfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-900.a 28 a , 60v n-channel power mosfet ? descripti on t he u t c UFZ34 is an n-cha nnel p o w e r m o sf et , it uses ut c?s adva n ced t e ch nolo g y to pr ovi de the c u stom ers w i th a min i mum on state resistanc e, high s w itc h i ng spe ed a nd l o w gate ch arg e . t he u t c ufz3 4 is suit able for al l commercia l-in d u strial appl icati ons, etc. ? features * r ds (on) <0.042 ? @v gs = 10v, i d = 17a * high s w itc h in g spee d * l o w ga te ch arg e ? sy mbol g (1) d (2) s (3) ? or de r i ng i n form at i o n ordering n u m ber package pi n assignment packing lea d f r ee halo ge n f r ee 1 2 3 uf z 34l-t a 3-t uf z 34g-t a3-t t o -220 g d s t ube uf z 34l-t m 3-t uf z 34g-t m3-t t o -251 g d s t ube uf z 34l-t n 3-r uf z 34g-t n3-r t o -252 g d s t ape reel note: pin assignment: g: ga te d: drain s: source http://
UFZ34 preliminary power m o sfet unisonic technologi es co., ltd 2 of 6 w w w . uniso nic.co m.t w ver .a ? absolute maxi mu m ra ting s paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 60 v gate-source v o ltag e v gss 20 v drain current contin uo us t c = 25c i d 28 a t c = 100c 20 a pulse d (note 1 ) i dm 112 a avala n che c u r r ent (note 1) i ar 17 a avalanche energy singl e puls ed ( note 2) e as 97 mj repetitiv e (not e 1) e ar 6.8 mj peak di ode r e cover y dv/dt (n ote 3) dv/dt 5.0 v/ns po w e r diss i pat ion t c = 25c p d 68 w line ar der a tin g f a ctor 0.46 w / c junctio n t e mperature t j -55~ +175 c storage t e mperature r ang e t st g -55~ +175 c note: absolute maximum ratings are those values be yond which the device coul d be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? th er mal char ac teri stic s parameter symbol rating unit junctio n to am bient ja 62 c/w junctio n to case jc 3.3 c/w notes: 1. repetitiv e rati ng: pulse w i dth limited b y ma ximum juncti on t e mperat ure. 2. l= 670 h, i as =17a, r g =2 5 ? , starting t j = 25c. 3. i sd 17a, di/dt 200a/s, v dd bv dss , starting t j 175c.
UFZ34 preliminary power m o sfet unisonic technologi es co., ltd 3 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 0 0 - . a ? electric al ch ara cteri s tic s (t j = 25c, unless oth e r w is e specifi ed) paramet er symbol t es t conditions min t yp max unit off characteristics drain-s ource breakd o w n vo l t age bv ds s i d = 250a, v gs =0v 60 v drain-s ource l eaka ge curr en t i ds s v ds = 60v, v gs =0v 25 a gate-source l eaka ge curr en t fo rw ard i gss v gs = + 20v, v ds = 0 v + 100 na reverse v gs = - 20v, v ds = 0 v -100 na on characteristics gate t h reshold voltag e v gs ( th ) v ds =v gs , i d = 250a 2.0 4.0 v static drain-s o urce on-state resistanc e (note 2) r ds (on) v gs = 10v, i d = 1 7a 0.042 ? dynamic parameters input cap a cita nce c iss v gs =0v, v ds =25v, f=1.0mhz 680 pf output capac itance c oss 220 pf reverse t r ansfer capac itanc e c rs s 80 pf switching parameters t o tal gate charge q g v gs = 10v, v ds =48v, i d = 17a (note 4) 30 nc gate to source charge q gs 6.7 n c gate to drain charge q gd 12 nc t u rn-on dela y t i me t d ( on ) v dd = 30v, i d = 17a, r g =1 3 ? , r d =1.8 ? (note 2) 5.1 ns rise t i me t r 30 ns turn-off delay time t d ( off ) 22 ns fall-t i me t f 30 ns source- drain diode ratings and characteristics maximum bod y -d iod e conti n uous current i s 28 a maximum body -diode puls ed current (note 1) i sm 100 a drain-s ource diod e f o r w ard voltage (note 2) v sd t j = 25c, i s =1 7 a , v gs =0 v 1 . 3 v bod y di ode r e verse rec o ver y t i me t rr t j = 25c, i f = 17a, di/dt= 100a/s 63 95 ns bod y di ode r e verse rec o ver y ch arg e (note 2) q rr 130 200 nc forward turn-on time t on intrinsic turn-o n time is neg lig ible (turn-on is d o m i nate d b y l s +l d ) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. pulse width 300s, duty cycle 2%.
UFZ34 preliminary power m o sfet unisonic technologi es co., ltd 4 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 0 0 - . a ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90 % 10 % t d( o n ) t r t f t d(off) 10v t on t off
UFZ34 preliminary power m o sfet unisonic technologi es co., ltd 5 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 0 0 - . a ? test circ uits and wav e for m s v ds + - du t r g dv/dt con t ro lle d by r g i sd con t ro lle d by pu lse pe riod v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= ga te pulse w i d t h gate pulse period 10 v di/d t body di od e re verse cu rren t i rm bo dy di ode reco very dv/dt v dd v sd bod y di od e fo rwa r d voltag e dro p i fm , bo dy dio de f o rw ard cu rren t pe ak dio de r e co very dv/dt te st ci rcuit an d wa veforms
UFZ34 preliminary power m o sfet unisonic technologi es co., ltd 6 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 9 0 0 - . a u t c as s u m e s no r e s pon s i bility f o r equipm e n t f a il u r es th at r e s u lt f r om us ing pr oducts a t v a lue s that ex ceed, ev e n m o m entar ily , r a ted v a lues ( s uch a s m a x i m u m r a tings , oper ating condition r anges , or othe r par am eter s ) lis t ed in pr oducts s pecif ications of any and all u t c pr odu c t s des cr ibed or contained her ein. u t c pr oducts ar e not des igned f o r us e in lif e s upp or t appliances , dev i c es or s y s t e m s w her e m a l f unction of thes e pr o ducts can be r eas onably ex p ected to r es ult in per s onal injur y . r epr oduction in whole or in p a r t is p r ohibited w i thout the pr ior w r it t en cons ent of the copyr i ght ow n er . t he inf o r m ation pr es e n ted in this docum ent does not f o r m par t of any quotation or contr a ct, is believ e d to be accur a te and r e liable and m a y be changed w i thout notice.
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